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Laser-Induced TGV Etcher

  • Laser-Induced TGV Etcher

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Specification

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  Applicable process


·  Laser-induced TGV etcher


  Applicable substrate size


·  500*515mm, downward compatible, including round and square wafers.


  Applicable substrate thickness


·  0.2-1.5mm

  Process capacity


·  Process flow: laser → etching → hot water rinsing → acid pickling → water rinsing → drying

·  Process temperature: 80-170°C (accuracy ±0.5°C@110°C)

·  Alkali concentration: 10-70%

·  TGV diameter: 15-200μm (uniformity ±0.5μm@50μm)



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Inquiry
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